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NAND Quality and Reliability R&D Engineer

Solidigm
Posted 25 days ago, valid for 9 days
Location

San Jose, CA, US

Salary

$139,520 - $255,000 per year

Contract type

Full Time

Flexible Spending Account

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Sonic Summary

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  • Solidigm is a multibillion-dollar global company specializing in memory technology, headquartered in Rancho Cordova, California.
  • They are seeking candidates for NAND array algorithm development and performance/reliability engineering with a minimum of 2 years of industry experience in semiconductor memory technologies.
  • The role involves designing experiments to evaluate NAND memory performance and reliability, optimizing performance parameters, and collaborating with cross-functional teams.
  • Candidates should have a Bachelor's degree in electrical engineering or a related field, a strong foundation in semiconductor device physics, and programming experience in languages such as C, C++, or Python.
  • The compensation for this position ranges from $139,520 to $255,000 annually, with additional benefits including stock options and a comprehensive health package.

Company Description

Join a multibillion-dollar global company that brings together amazing technology, people, and operational scale to become a powerhouse in the memory industry. Headquartered in Rancho Cordova, California, Solidigm combines elements of an established, successful technology company with the spirit, agility, and entrepreneurial mindset of a start-up. In addition to the U.S. headquarters and other facilities in the U.S., the company has international presence in Asia, Europe, and the Americas. Solidigm will continue to lead the world in innovating new Memory technologies with aspirations to be the #1 NAND memory company in the world. At Solidigm, we view problems as opportunities to define innovative solutions that hold the power to change the world and unleash the potential technological needs that the future holds. At Solidigm, we are One Team that fosters a diverse, equitable, and inclusive culture that embraces individual uniqueness and empowers us to bring our best selves to deliver excellence in support of Solidigm's vision and mission to be the go-to partner for optimized data storage solutions. You can be part of the takeoff of an innovative business that develops cutting-edge products, delivers strong business value for customers, provides an engaging workplace for its employees, and serves a greater impact on the world. This is a golden opportunity for the right applicant to join us and help design, build, and lead Solidigm. We want a diverse team of dedicated professionals who will not just be Solidigm team members but contribute to how we shape the future of the organization. We are seeking applicants who will grow and thrive in our culture; be customer inspired, trusting, innovative, team-oriented, inclusive, results driven, collaborative, passionate, and flexible.

Job Description

NAND array algorithm development and performance/reliability engineering.

Key Responsibilities:

  • Design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.
  • Develop and optimize trims to minimize program and read disturb, directly impacting product quality.
  • Develop and optimize trims to optimize performance and power (tPROGRAM, tREAD, Icc), without impacting reliability and endurance capabilities.
  • Apply NAND device physics principles to explain and interpret relationships between experimental data and trim parameters.
  • Conduct comprehensive data analysis to identify and communicate trade-offs across multiple parameters of interest.
  • Use NAND device physics knowledge and problem-solving skills to design experiments, identify product failure mechanisms, and implement effective solutions.
  • Collaborate cross-functionally with Device, Design, Reliability, and Product/Test Engineering teams to design, test, and deeply innovative method to improve performance and reliability.

Qualifications

Required Qualifications:

  • Bachelor’s in electrical engineering, Microelectronics, or a closely related field. 
  • 2+ years of industry experience in semiconductor memory technologies and products.
  • Deep understanding of NAND cell and array operations, including array reliability physical mechanisms and characterization techniques.
  • Strong foundation in semiconductor device physics and process flows.
  • Proficiency in statistical analysis methodologies and tools.
  • Hands-on programming experience in C, C++, Python, and/or JMP.
  • Proven ability to thrive in a fast-paced, cross-functional team environment.
  • Strong analytical and problem-solving skills with attention to detail.
  • Excellent communication and presentation skills, with the ability to convey complex technical concepts to diverse audiences.

Preferred Qualifications:

  • Master's or PhD in Electrical Engineering, Microelectronics, or a closely related field. 
  • Experience with 3D NAND architecture and advanced memory scaling challenges.
  • Experience in SSD system level FW design and testing

Additional Information

This position is also eligible to participate in Solidigm's restricted stock unit (RSU), restricted cash unit (RCU), and cash bonus programs. In addition, Solidigm offers a benefits package that includes medical, dental, vision, supplemental life and AD&D insurance; short- and long-term disability; healthcare and dependent care flexible spending accounts, and a company match on eligible 401(k) plan contributions.

The compensation range for this role is $139,520 - $255,000. Actual compensation is influenced by a variety of factors including but not limited to skills, experience, qualifications, and geographic location.

Working Conditions: Rancho Cordova CA  or  San Jose CA ; Full-time hybrid; at least 3 days per week onsite.

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  • Department: NAND Development
  • Compensation: USD 139520 - USD 255000 - yearly



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