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Product Engineer, SiC

NAVITAS SEMICONDUCTOR USA, INC.
Posted 3 months ago, valid for 12 days
Location

Torrance, CA 90503, US

Salary

$90,000 - $135,000 per year

Contract type

Full Time

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Sonic Summary

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  • Navitas Semiconductor is seeking a Product Engineer – SiC for their Torrance, CA location, offering a salary range of $90,000.00 to $135,000.00 per year.
  • The role requires 2–3 years of experience in high-voltage SiC or discrete power device product, test, or characterization engineering.
  • Key responsibilities include executing device characterization, supporting technology qualification, and driving yield and quality improvements.
  • Candidates should possess a B.S. or M.S. in Electrical Engineering, Physics, or a related field, along with hands-on bench testing experience.
  • The position offers a dynamic work environment with opportunities for mentorship and involvement in cutting-edge power electronics technology.

Job DetailsJob Location: Torrance, CA 90503Position Type: Full TimeSalary Range: $90,000.00 - $135,000.00 Salary/yearJob Purpose Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification. The Product Engineer – SiC supports the development and production of high-voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. This role helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment. Key Responsibilities and Duties Execute device characterization across the SiC portfolio, including test planning, measurement, and reporting. Support the qualification of new technologies and products. Develop CP and FT test plans and validate test hardware and test programs. Support cross-functional task forces in resolving critical quality and yield issues. Analyze CP/FT and characterization data to drive yield and quality improvements. Support lot disposition, yield monitoring, and sustaining engineering activities. Drive test-limit optimization and continuous-improvement initiatives. Perform wafer probing, bench debugging, and root cause analysis. Collaborate with Test, Reliability, Operations, and Packaging teams. QualificationsRequired Qualifications B.S. or M.S. in Electrical Engineering, Physics, or a related field. 2–3 years of experience in high-voltage SiC (or discrete power device) product, test, or characterization engineering. Experience with semiconductor device analysis and debugging. Hands-on bench testing experience with high-voltage discrete FETs, including the use of low-voltage (LV) and high-voltage (HV) power supplies, digital multimeters (DMMs), and oscilloscopes. Strong data-analysis skills (SPC, Cpk, yield). Familiarity with CP/FT production flows. Preferred Qualifications Experience with failure analysis and reliability testing. Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit). Knowledge of JMP, Python, or similar data-analysis tools. What We Offer A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies. Hands-on ownership across the full product lifecycle, from silicon bring-up to high-volume manufacturing. A fast-paced, execution-focused environment with strong mentorship and deep technical expertise across teams.




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