Description
Work with our design, verification and integration engineers to ensure memory controller and PHY requirements are well defined and cover the scope of DRAM based corner cases. Collaborate with Architecture, MCU, DDRPHY and DRAM vendors for Apple’s main memory feature. Ensure DRAM simulation meets Apple's requirements. Ensure the internal and external DRAM silicon and package level testing needs are met. Debug RMA material with apparent DRAM related defects. Collaborate with the DRAM vendors to improve the DRAM performance and power on Apple systems. Drive the roadmaps and specs of memory vendors for next technology node devices.
Minimum Qualifications
PhD or MS or BS Degree with 5+ years in DRAM development
Preferred Qualifications
Expert in DRAM cell architectures Expert of DRAM memory organization and periphery design for low DRAM power Expertise in DRAM simulation Experience in memory interface verification with understanding DDR-PHY and Memory Controller Experience in LPDDR IO (DDR/DDR2/DDR3/DDR4/DDR5) characterization and qualification Understanding of memory test patterns Knowledge of DRAM reliability Knowledge with innovative packaging technology (POP, TSV, etc.) and their relationship to DRAM signal/power integrity Previous experience in Failure Analysis of DRAM devices Excellent hardware and software debug skill Experience working with the major DRAM vendors Strong background in computer architecture Programming experience in C/C++ Excellent interpersonal skills and teamwork.
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