RF Technology Development Device Engineer (2027 New College Graduate)

About GlobalFoundries 

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com. 

New College Graduates Overview:  

We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.​ 

Summary of Role: 

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for an device and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT 

Essential Responsibilities include: 

• Responsible for TCAD simulation, design, electrical characterization and analysis of SiGe HBT devices 

• Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art 

• Work closely with process integration team for device fabrication work.  

• Establish new technology design rules, test structures and test methodologies 

• Responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull 

• Own and drive technical process problem solving. 

• Data analysis 

• Interact with internal & external customers and respond to technical queries. 

• Innovate new methods of continuous process/device improvement. 

Other Responsibilities: 

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. 

Required Qualifications: 

• Education – Graduating with Master’s or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.  

• Research background in CMOS or III-V or memory device physics, semiconductor processing, and characterization 

• Strong data analysis skills 

• Excellent interpersonal skills, both oral and written 

• Must have at least an overall 3.0 GPA and proven good academic standing. 

• Language Fluency - English (Written & Verbal)  

Preferred Qualifications:  

• Research experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development 

• Research experience in RF device design and characterization including high frequency design, measurement and analysis 

• Experience with Cadence or any other layout and simulation tool 

• Prior related internship or co-op experience. 

• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc. 

• Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.  

• Strong written and verbal communication skills  

• Strong planning & organizational skills 

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